Datasheet > SCTWA50N120

SCTWA50N120

更新时间： 2024-11-01 14:58:23

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意法半导体 - STMICROELECTRONICS		/
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描述
碳化硅功率MOSFET，1200 V、65 A、59 mOhm（典型值，TJ = 150 C），HiP247长引线封装

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SCTWA50N120 数据手册

SCTWA50N120

Silicon carbide Power MOSFET 1200 V, 65 A,

59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package

Datasheet - production data

Features



Very tight variation of on-resistance vs.

temperature



Very high operating junction temperature

capability (T_J= 200 °C)



Very fast and robust intrinsic body diode

Low capacitance

Applications



Solar inverters, UPS

Motor drives

High voltage DC-DC converters

Switch mode power supplies

Figure 1: Internal schematic diagram

Description

D(2, TAB)

This silicon carbide Power MOSFET is produced

exploiting the advanced, innovative properties of

wide bandgap materials. This results in

unsurpassed on-resistance per unit area and

very good switching performance almost

independent of temperature. The outstanding

thermal properties of the SiC material allows

designers to use an industry-standard outline

with significantly improved thermal capability.

These features render the device perfectly

suitable for high-efficiency and high power

density applications.

G(1)

S(3)

AM01475v1_noZen

Table 1: Device summary

Order code

Marking

SCT50N120

Package

Packaging

SCTWA50N120

HiP247™ long leads

Tube

April 2017

DocID029423 Rev 3

1/11

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...11

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