Datasheet > SCTWA70N120G2V-4

SCTWA70N120G2V-4

更新时间： 2024-11-06 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	213K
描述
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package

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SCTWA70N120G2V-4 数据手册

SCTWA70N120G2V-4

Datasheet

Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package

Features

DS(on)

max.

Order code

SCTWA70N120G2V-4

1200 V

30 mΩ

91 A

•

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability (T_J= 200 °C)

Source sensing pin for increased efficiency

HiP247-4

Applications

Drain(1, TAB)

•

Switching mode power supply

DC-DC converters

Industrial motor control

Gate(4)

Driver

source(3)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

Power

source(2)

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

ND1TPS2DS3G4

Product status link

SCTWA70N120G2V-4

Product summary

Order code

Marking

SCTWA70N120G2V-4

SCT70N120G2V

HiP247-4

Package

Packing

Tube

DS13730 - Rev 1 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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