Datasheet > SCTWA35N65G2V4AG

SCTWA35N65G2V4AG

更新时间： 2024-09-14 14:58:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	193K
描述
Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package

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SCTWA35N65G2V4AG 数据手册

SCTWA35N65G2V4AG

Datasheet

Automotive-grade silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A

in an HiP247-4 package

Features

DS(on)

max.

Order code

SCTWA35N65G2V4AG

650 V

67 mΩ

45 A

•

AEC-Q101 qualified

Very fast and robust intrinsic body diode

Low capacitances

HiP247-4

Source sensing pin for increased efficiency

Very high operating junction temperature capability (T_J= 200 °C)

Drain(1, TAB)

Applications

•

Main inverter (electric traction)

Gate(4)

DC/DC converter for EV/HEV

On board charger (OBC)

Driver

source(3)

Power

source(2)

Description

ND1TPS2DS3G4

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

Product status link

SCTWA35N65G2V4AG

Product summary

Order code

Marking

SCTWA35N65G2V4AG

SCT35N65G2VAG

HiP247-4

Package

Packing

Tube

DS13580 - Rev 1 - December 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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