Datasheet > SCTW60N120G2

SCTW60N120G2

更新时间： 2024-11-02 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	196K
描述
Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package

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SCTW60N120G2 数据手册

SCTW60N120G2

Datasheet

Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package

Features

DS(on)

max.

Order code

SCTW60N120G2

1200 V

52 mΩ

60 A

•

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability (T_J= 200 °C)

HiP247

Applications

•

Switching mode power supply

D(2, TAB)

DC-DC converters

Industrial motor control

Description

This silicon carbide Power MOSFET device has been developed using ST’s

G(1)

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

S(3)

AM01475v1_noZen

Product status link

SCTW60N120G2

Product summary

Order code

SCTW60N120G2

Marking

Package

Packing

SCT60N120G2

HiP247

Tube

DS13716 - Rev 3 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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