Datasheet > SCTW90N65G2V

SCTW90N65G2V

更新时间： 2024-09-14 14:57:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	397K
描述
碳化硅功率MOSFET，650 V、119 A、18 mOhm（典型值，TJ = 25 C），HiP247封装

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SCTW90N65G2V 数据手册

SCTW90N65G2V

Datasheet

Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., T_J= 25 °C)

in an HiP247 package

Features

DS(on)

max.

Order code

SCTW90N65G2V

650 V

24 mΩ

119 A

•

Very high operating junction temperature capability (T_J= 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

HiP247

Applications

•

Switching applications

Power supply for renewable energy systems

High frequency DC-DC converters

D(2, TAB)

Description

G(1)

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

S(3)

AM01475v1_noZen

Product status link

SCTW90N65G2V

Product summary

Order code

Marking

SCTW90N65G2V

SCT90N65G2V

HiP247

Package

Packing

Tube

DS11832 - Rev 5 - July 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

中文翻译

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