Datasheet > SCTW35N65G2VAG

SCTW35N65G2VAG

更新时间： 2024-11-01 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	201K
描述
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package

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SCTW35N65G2VAG 数据手册

SCTW35N65G2VAG

Datasheet

Automotive-grade silicon carbide Power MOSFET

650 V, 45 A, 55 mΩ (typ., T_J= 25 °C) in an HiP247 package

Features

DS(on)

typ.

Order code

SCTW35N65G2VAG

650 V

55 mΩ

45 A

•

AEC-Q101 qualified

Very fast and robust intrinsic body diode

Low capacitance

HiP247

Applications

•

Switching mode power supply

D(2, TAB)

EV chargers

DC-DC converters

G(1)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 2^ndgeneration SiC MOSFET technology. The device

features remarkably low on-resistance per unit area and very good switching

performance. The variation of switching loss is almost independent of junction

temperature.

S(3)

AM01475v1_noZen

Product status link

SCTW35N65G2VAG

Product summary

Order code

Marking

SCTW35N65G2VAG

SCT35N65G2VAG

HiP247

Package

Packing

Tube

DS12885 - Rev 3 - September 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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