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SCH1439-TL-W PDF预览

SCH1439-TL-W

更新时间: 2024-09-17 19:55:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 680K
描述
Power MOSFET, 30V, 72mΩ, 3.5A, Single N-Channel, 5000-REEL

SCH1439-TL-W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:not_compliant
Factory Lead Time:1 week风险等级:5.64
JESD-609代码:e6湿度敏感等级:1
端子面层:Tin/Bismuth (Sn/Bi)Base Number Matches:1

SCH1439-TL-W 数据手册

 浏览型号SCH1439-TL-W的Datasheet PDF文件第2页浏览型号SCH1439-TL-W的Datasheet PDF文件第3页浏览型号SCH1439-TL-W的Datasheet PDF文件第4页浏览型号SCH1439-TL-W的Datasheet PDF文件第5页 
SCH1439  
Power MOSFET  
30V, 72m, 3.5A, Single N-Channel  
This low-profile high-power MOSFET is produced using ON  
Semiconductor’s trench technology, which is specifically designed to  
minimize gate charge and ultra low on resistance. This device is suitable for  
applications with low gate charge driving or ultra low on resistance  
requirements.  
www.onsemi.com  
Features  
Low On-Resistance  
V
R
DS  
(on) Max  
I
DSS  
D Max  
3.5A  
72m@ 10V  
110m@ 4.5V  
128m@ 4V  
4V drive  
30V  
ESD Diode-Protected Gate  
Pb-Free, Halogen Free and RoHS compliance  
Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)  
ELECTRICAL CONNECTION  
N-Channel  
Typical Applications  
Load Switch  
Battery Switch  
1, 2, 5, 6  
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
1 : Drain  
2 : Drain  
3 : Gate  
4 : Source  
5 : Drain  
6 : Drain  
Symbol  
Value  
Unit  
V
3
V
V
I
30  
20  
3.5  
DSS  
GSS  
V
A
4
D
Drain Current (Pulse)  
I
14  
A
DP  
PW 10s, duty cycle 1%  
PACKING TYPE : TL  
MARKING  
Power Dissipation  
When mounted on ceramic substrate  
(900mm2 0.8mm)  
P
1
W
D
ZQ  
Junction Temperature  
Tj  
150  
C  
C  
TL  
Storage Temperature  
Tstg  
55 to +150  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction to Ambient  
Symbol  
Value  
Unit  
R
JA  
125  
C/W  
When mounted on ceramic substrate  
(900mm2 0.8mm)  
© Semiconductor Components Industries, LLC, 2015  
September 2015 - Rev. 2  
1
Publication Order Number :  
SCH1439/D  

SCH1439-TL-W 替代型号

型号 品牌 替代类型 描述 数据表
SCH1439-TL-H ONSEMI

功能相似

Power MOSFET, 30V, 72mΩ, 3.5A, Single N-Channel, SOT-563 / SCH6, 5000-REEL

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