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SCH2411

更新时间： 2024-11-25 20:23:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 53K
描述
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),LLCC

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中文翻译

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SCH2411 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.76Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：0.2 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.6 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

SCH2411 数据手册

 浏览型号SCH2411的Datasheet PDF文件第2页浏览型号SCH2411的Datasheet PDF文件第3页浏览型号SCH2411的Datasheet PDF文件第4页 
Ordering number : ENA0531  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
SCH2411  
Features  
•
4V drive.  
•
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
200  
800  
0.6  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
D
mA  
mA  
W
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10μs, duty cycle≤1%  
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit  
DP  
P
D
Tch  
150  
°C  
°C  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
D GS  
60  
V
μA  
μA  
V
(BR)DSS  
I
V
V
V
V
=60V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =100μA  
1.2  
2.6  
D
Forward Transfer Admittance  
yfs  
⏐
=10V, I =100mA  
140  
240  
mS  
Ω
⏐
D
R
(on)1  
I
I
=100mA, V =10V  
D GS  
1.8  
2.6  
27  
2.4  
3.7  
DS  
Static Drain-to-Source On-State Resistance  
R
(on)2  
=50mA, V =4V  
D GS  
Ω
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : LL  
Ciss  
V
V
V
=20V, f=1MHz  
DS  
=20V, f=1MHz  
DS  
=20V, f=1MHz  
DS  
pF  
pF  
pF  
Coss  
Crss  
8.6  
4.4  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
40208PE TI IM TC-00001264 No. A0531-1/4  
1234

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