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SCH2602

更新时间： 2024-09-17 03:33:15
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6页 53K
描述
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

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中文翻译

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SCH2602 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
Is Samacsys：N配置：COMPLEX
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：1.5 A
最大漏极电流 (ID)：0.35 A最大漏源导通电阻：3.7 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：0.6 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SCH2602 数据手册

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Ordering number : ENN8323  
N-Channel and P-Channel Silicon MOSFETs  
General-Purpose Switching Device  
Applications  
SCH2602  
Features  
•
The SCH2602 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON- resistance  
and high-speed switching, thereby enabling high-density mounting.  
Low ON-resistance.  
•
•
2.5V drive (N-ch), 1.8V drive (P-ch).  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
N-channel  
30  
P-channel  
--12  
Unit  
V
V
DSS  
GSS  
V
±10  
0.35  
1.4  
±10  
--1.5  
--6  
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
A
DP  
P
Mounted on a ceramic board (900mm2✕0.8mm) 1unit  
0.6  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
[N-channel]  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
30  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=30V, V =0V  
GS  
10  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =100µA  
0.4  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =80mA  
130  
220  
2.9  
3.7  
6.4  
mS  
Ω
D
R
(on)1  
I
D
I
D
I
D
=80mA, V =4V  
GS  
3.7  
5.2  
DS  
DS  
DS  
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=40mA, V =2.5V  
GS  
Ω
=10mA, V =1.5V  
GS  
12.8  
Ω
Marking : FB  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62005PE MS IM TA-100972 No.8323-1/6  
123456

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