生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 配置: | COMPLEX |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 1.5 A |
最大漏极电流 (ID): | 0.35 A | 最大漏源导通电阻: | 3.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 0.6 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SCH2615 | SANYO |
获取价格 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
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SCH2805 | ONSEMI |
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TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,500MA I(D),SOT-363VAR |
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SCH2806 | SANYO |
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General-Purpose Switching Device Applications |
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SCH2807 | SANYO |
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MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
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SCH2808 | SANYO |
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MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D |
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SCH2809 | SANYO |
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MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D |
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SCH2811 | SANYO |
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MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D |
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SCH2812 | SANYO |
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SCH2812 |
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SCH2815 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device |
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SCH2816 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D |
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