生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 12 V | 最大漏极电流 (Abs) (ID): | 1.2 A |
最大漏极电流 (ID): | 1.2 A | 最大漏源导通电阻: | 0.31 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 35 pF |
JESD-30 代码: | R-PDSO-F6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | DEPLETION MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.6 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SCH2811 | SANYO |
获取价格 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
SCH2812 | SANYO |
获取价格 |
SCH2812 | |
SCH2815 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device | |
SCH2816 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
SCH2816_07 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
SCH2817 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
SCH2817_07 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
SCH2819 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
SCH2821 | SANYO |
获取价格 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D | |
SCH2822 | SANYO |
获取价格 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D |