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SCH2809

更新时间： 2024-11-09 03:33:15
品牌 Logo 应用领域
三洋 - SANYO 肖特基二极管开关通用开关
页数 文件大小 规格书
6页 50K
描述
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

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中文翻译

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SCH2809 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：12 V最大漏极电流 (Abs) (ID)：1.2 A
最大漏极电流 (ID)：1.2 A最大漏源导通电阻：0.31 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：35 pF
JESD-30 代码：R-PDSO-F6元件数量：1
端子数量：6工作模式：DEPLETION MODE
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：0.6 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SCH2809 数据手册

 浏览型号SCH2809的Datasheet PDF文件第2页浏览型号SCH2809的Datasheet PDF文件第3页浏览型号SCH2809的Datasheet PDF文件第4页浏览型号SCH2809的Datasheet PDF文件第5页浏览型号SCH2809的Datasheet PDF文件第6页 
Ordering number : ENA0446  
SANYO Sem iconductors  
DATA S HEET  
MOSFET : P-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
SCH2809  
General-Purpose Switching Device  
Applications  
Features  
•
Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained  
in one package facilitating high-density mounting.  
•
[MOSFET]  
•
Low ON-resistance.  
• Ultrahigh-speed switching.  
• 1.8V drive.  
•
[SBD]  
• Short reverse recovery time  
.
• Low forward voltage  
.
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
--12  
±10  
--1.2  
--4.8  
0.6  
V
V
DSS  
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
[SBD]  
I
PW≤10µs, duty cycle≤1%  
A
DP  
P
Mounted on a ceramic board (900mm2✕0.8mm) 1unit  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +125  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Marking : QJ  
V
15  
V
V
RRM  
V
15  
0.5  
RSM  
I
A
O
I
50Hz sine wave, 1 cycle  
3
A
FSM  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Tstg  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
82306 / 62006PE MS IM TB-00002323 No. A0446-1/6  
123456

中文翻译

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