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SCH2808

更新时间： 2024-11-07 03:33:15
品牌 Logo 应用领域
三洋 - SANYO 肖特基二极管开关通用开关
页数 文件大小 规格书
6页 49K
描述
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

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中文翻译

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SCH2808 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：1.4 A
最大漏极电流 (ID)：1.4 A最大漏源导通电阻：0.3 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F6
元件数量：1端子数量：6
工作模式：DEPLETION MODE最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.6 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SCH2808 数据手册

 浏览型号SCH2808的Datasheet PDF文件第2页浏览型号SCH2808的Datasheet PDF文件第3页浏览型号SCH2808的Datasheet PDF文件第4页浏览型号SCH2808的Datasheet PDF文件第5页浏览型号SCH2808的Datasheet PDF文件第6页 
Ordering number : ENN8360  
MOSFET : N-Channel Silicon MOSFET  
SBD : Schottky Barrier Diode  
SCH2808  
General-Purpose Switching Device  
Applications  
Features  
•
Composite type with an N-channel sillicon MOSFET (SCH1412) and a schottky barrier diode (SS0503)  
contained in one package facilitating high-density mounting.  
[MOSFET]  
•
•
Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
4V drive.  
•
[SBD]  
•
Short reverse recovery time.  
•
Low forward voltage.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[MOSFET]  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
30  
±20  
1.4  
5.6  
0.6  
150  
V
V
DSS  
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
[SBD]  
I
PW≤10µs, duty cycle≤1%  
A
DP  
P
Mounted on a ceramic board (900mm2✕0.8mm) 1unit  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +125  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Marking : QH  
V
30  
V
V
RRM  
V
30  
0.5  
RSM  
I
O
A
I
50Hz sine wave, 1 cycle  
3
A
FSM  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Tstg  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62005PE MS IM TB-00001448  
No.8360-1/6  
123456

中文翻译

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 		MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
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 		MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2817 SANYO

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 		MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2817_07 SANYO

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 		MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2819 SANYO

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 		MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2821 SANYO

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 		MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D

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