Datasheet > SCH2805

SCH2805

更新时间： 2024-11-07 20:36:31

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
6页	106K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,500MA I(D),SOT-363VAR

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中文翻译

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技术参数
数据手册

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SCH2805 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	0.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	125 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.6 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

SCH2805 数据手册

Ordering number : ENN7760

SCH2805

MOSFET : P-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

SCH2805

General-Purpose Switching Device

Applications

Features

•

Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB0105)

contained in one package facilitating high-density mounting.

[MOSFET]

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

4V drive.

[SBD]

• Short reverse recovery time

• Low forward voltage

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

--60

±20

--0.5

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[SBD]

PW≤10µs, duty cycle≤1%

--2

Mounted on a ceramic board (900mm²✕0.8mm) 1unit

0.6

150

°C

Tch

Tstg

--55 to +125

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Marking : QE

RRM

100

RSM

50Hz sine wave, 1 cycle

FSM

--55 to +125

°C

Tstg

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

Rev.0 I Page 1 of 6 I www.onsemi.com

SCH2805/D

12 3 4 5 6

中文翻译

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SCH2806	SANYO	获取价格	General-Purpose Switching Device Applications
SCH2807	SANYO	获取价格	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
SCH2808	SANYO	获取价格	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2809	SANYO	获取价格	MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2811	SANYO	获取价格	MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2812	SANYO	获取价格	SCH2812
SCH2815	SANYO	获取价格	MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device
SCH2816	SANYO	获取价格	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2816_07	SANYO	获取价格	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D
SCH2817	SANYO	获取价格	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching D