生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 最小漏源击穿电压: | 12 V |
最大漏极电流 (Abs) (ID): | 0.9 A | 最大漏极电流 (ID): | 0.9 A |
最大漏源导通电阻: | 0.615 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.65 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SCH2401 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
SCH2408 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
SCH2409 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
SCH2410 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
SCH2411 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
SCH2411 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),LLCC | |
SCH25000 | SEMTECH |
获取价格 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY | |
SCH25000 | SENSITRON |
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DESCRIPTION: A 25, 0.5 AMP, 5 NANOSECOND, HIGH VOLTAGE RECTIFIERS. | |
SCH2503 | ONSEMI |
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TRANSISTOR,BJT,COMPLEMENTARY,30V V(BR)CEO,600MA I(C),LLCC | |
SCH2602 | SANYO |
获取价格 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |