5秒后页面跳转
捷配首页

Datasheet > SCH2408
SCH2408 PDF预览

SCH2408

更新时间： 2024-11-25 06:10:31
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
4页 54K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

阅读下载

中文翻译

获取价格

SCH2408 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：0.35 A
最大漏极电流 (ID)：0.35 A最大漏源导通电阻：1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.6 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SCH2408 数据手册

 浏览型号SCH2408的Datasheet PDF文件第2页浏览型号SCH2408的Datasheet PDF文件第3页浏览型号SCH2408的Datasheet PDF文件第4页 
Ordering number : ENA1198  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
SCH2408  
Features  
•
1.5V drive.  
•
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
±10  
0.35  
1.4  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
D
A
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10μs, duty cycle≤1%  
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit  
A
DP  
P
D
0.6  
W
°C  
°C  
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
D GS  
30  
V
μA  
μA  
V
(BR)DSS  
I
V
V
V
V
=30V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =100μA  
0.4  
1.3  
D
Forward Transfer Admittance  
yfs  
⏐
=10V, I =200mA  
360  
600  
mS  
Ω
⏐
D
R
(on)1  
I
I
I
=200mA, V =4V  
GS  
0.75  
0.9  
1.8  
28  
1.0  
1.3  
3.6  
DS  
DS  
DS  
D
D
D
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=100mA, V =2.5V  
GS  
Ω
=10mA, V =1.5V  
GS  
Ω
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : LH  
Ciss  
V
V
V
=10V, f=1MHz  
DS  
=10V, f=1MHz  
DS  
=10V, f=1MHz  
DS  
pF  
pF  
pF  
Coss  
Crss  
6.0  
3.1  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
51408PE TI IM TC-00001352 No. A1198-1/4  
1234

中文翻译

下载PDF

与SCH2408相关器件

型号 品牌 获取价格 描述 数据表
SCH2409 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device Applications
SCH2410 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device Applications
SCH2411 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device Applications
SCH2411 ONSEMI

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),LLCC
SCH25000 SEMTECH

获取价格

 		STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
SCH25000 SENSITRON

获取价格

 		DESCRIPTION: A 25, 0.5 AMP, 5 NANOSECOND, HIGH VOLTAGE RECTIFIERS.
SCH2503 ONSEMI

获取价格

 		TRANSISTOR,BJT,COMPLEMENTARY,30V V(BR)CEO,600MA I(C),LLCC
SCH2602 SANYO

获取价格

 		N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
SCH2615 SANYO

获取价格

 		N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
SCH2805 ONSEMI

获取价格

 		TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,500MA I(D),SOT-363VAR

与SCH2408相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证