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SCH2101

更新时间： 2024-11-09 19:58:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 40K
描述
TRANSISTOR,BJT,PAIR,PNP,12V V(BR)CEO,800MA I(C),LLCC

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中文翻译

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SCH2101 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.61最大集电极电流 (IC)：0.8 A
最小直流电流增益 (hFE)：300最高工作温度：150 °C
极性/信道类型：PNP最大功率耗散 (Abs)：0.4 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

SCH2101 数据手册

 浏览型号SCH2101的Datasheet PDF文件第2页浏览型号SCH2101的Datasheet PDF文件第3页浏览型号SCH2101的Datasheet PDF文件第4页 
Ordering number : ENN8186  
PNP Epitaxial Planar Silicon Transistor  
SCH2101  
Switching, Driver Applications  
Applications  
•
Low-frequency power amplifier, high-speed switch, motor drivers, muting.  
Features  
• Composite type with 2 PNP transistors contained in a single package facilitating high-density mounting.  
• Ultrasmall package permitting applied sets to be small and slim.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Mounted on a ceramic board (600mm2✕0.8mm) 1unit  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
--15  
--12  
-- 5  
V
V
I
--0.8  
--1.6  
0.4  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
A
CP  
P
W
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Unit  
min  
max  
--100  
--100  
700  
I
V
CB  
V
EB  
V
CE  
V
CE  
V
CB  
=--12V, I =0  
nA  
nA  
CBO  
E
Emitter Cutoff Current  
I
=--4V, I =0  
C
EBO  
DC Current Gain  
h
FE  
=--2V, I =--10mA  
300  
C
Gain-Bandwidth Product  
f
T
=--2V, I =--50mA  
C
450  
6
MHz  
pF  
mV  
V
Output Capacitance  
Cob  
=--10V, f=1MHz  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Marking : EA  
V
V
(sat)  
I
C
I
C
I
C
I
C
=--400mA, I =--20mA  
--120  
--0.9  
--240  
--1.2  
CE  
B
(sat)  
=--400mA, I =--20mA  
BE  
B
V
V
V
=--10µA, I =0  
--15  
--12  
--5  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
E
=--1mA, R =∞  
BE  
V
I =--10µA, I =0  
V
E
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
12505EA TS IM TB-00001082 No.8186-1/4  
1234

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