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SCH1430 PDF预览

SCH1430

更新时间: 2024-09-18 02:57:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 533K
描述
Single N-Channel Power MOSFET

SCH1430 数据手册

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SCH1430  
Power MOSFET  
20V, 125m, 2A, Single N-Channel  
This low-profile high-power MOSFET is produced using ON  
Semiconductor’s trench technology, which is specifically designed to  
minimize gate charge and ultra low on resistance. This device is suitable for  
applications with low gate charge driving or ultra low on resistance  
requirements.  
www.onsemi.com  
Features  
Low On-Resistance  
1.8V drive  
ESD Diode-Protected Gate  
Pb-Free, Halogen Free and RoHS compliance  
Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)  
V
R
(on) Max  
I
DSS  
DS  
D Max  
2A  
125m@ 4.5V  
190m@ 2.5V  
310m@ 1.8V  
20V  
ELECTRICAL CONNECTION  
N-Channel  
Typical Applications  
Load Switch  
1, 2, 5, 6  
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Value  
Unit  
V
1 : Drain  
2 : Drain  
3 : Gate  
4 : Source  
5 : Drain  
6 : Drain  
V
V
20  
12  
2
DSS  
GSS  
3
V
I
A
D
Drain Current (Pulse)  
4
I
8
A
DP  
PW 10μs, duty cycle 1%  
Power Dissipation  
PACKING TYPE : TL  
MARKING  
When mounted on ceramic substrate  
(900mm2  
× 0.8mm)  
P
0.8  
W
D
Junction Temperature  
Tj  
150  
°C  
°C  
Storage Temperature  
Tstg  
55 to +150  
ZF  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
TL  
THERMAL RESISTANCE RATINGS  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
Parameter  
Junction to Ambient  
When mounted on ceramic substrate  
(900mm2  
0.8mm)  
Symbol  
Value  
Unit  
R
θJA  
156.2  
°C/W  
×
© Semiconductor Components Industries, LLC, 2015  
August 2015 - Rev. 2  
1
Publication Order Number :  
SCH1430/D  

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