Datasheet > SCH1435-TL-W

SCH1435-TL-W

更新时间： 2024-09-17 20:07:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	665K
描述
Power MOSFET, 30V, 89mΩ, 3A, Single N-Channel, 5000-REEL

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中文翻译

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技术参数
数据手册

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SCH1435-TL-W 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

SCH1435-TL-W 数据手册

SCH1435

Power MOSFET

30V, 89mΩ, 3A, Single N-Channel

This low-profile high-power MOSFET is produced using ON

Semiconductor’s trench technology, which is specifically designed to

minimize gate charge and ultra low on resistance. This device is suitable for

applications with low gate charge driving or ultra low on resistance

requirements.

www.onsemi.com

Features

• Low On-Resistance

• 1.8V drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS compliance

• Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

(on) Max

DSS

D Max

89mΩ@ 4.5V

126mΩ@ 2.5V

195mΩ@ 1.8V

30V

ELECTRICAL CONNECTION

N-Channel

Typical Applications

• Load Switch

1, 2, 5, 6

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Value

Unit

DSS

GSS

Drain Current (Pulse)

PW ≤ 10μs, duty cycle ≤ 1%

Power Dissipation

PACKING TYPE : TL

MARKING

When mounted on ceramic substrate

(900mm²

× 0.8mm)

0.8

Junction Temperature

150

°C

Storage Temperature

Tstg

−55 to +150

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm²

0.8mm)

Symbol

Value

Unit

θJA

156.2

°C/W

August 2015 - Rev. 2

Publication Order Number :

SCH1435/D

12 3 4 5

中文翻译

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