Datasheet > SCH1436-TL-W

SCH1436-TL-W

更新时间： 2024-09-17 21:13:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	667K
描述
Power MOSFET, 30V, 180mΩ, 1.8A, Single N-Channel, 5000-REEL

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中文翻译

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技术参数
数据手册
替代型号

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SCH1436-TL-W 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
Factory Lead Time：	1 week	风险等级：	5.7
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

SCH1436-TL-W 数据手册

SCH1436

Power MOSFET

30V, 180mΩ, 1.8A, Single N-Channel

This low-profile high-power MOSFET is produced using ON

Semiconductor’s trench technology, which is specifically designed to

minimize gate charge and ultra low on resistance. This device is suitable for

applications with low gate charge driving or ultra low on resistance

requirements.

www.onsemi.com

Features

(on) Max

• Low On-Resistance

• 4V drive

• Low Capacitance

DSS

D Max

1.8A

180mΩ@ 10V

330mΩ@ 4V

30V

• Pb-Free, Halogen Free and RoHS compliance

• Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

ELECTRICAL CONNECTION

N-Channel

Typical Applications

• Load Switch

1, 2, 5, 6

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Value

Unit

DSS

GSS

1.8

Drain Current (Pulse)

7.2

PW ≤ 10μs, duty cycle ≤ 1%

PACKING TYPE : TL

MARKING

Power Dissipation

When mounted on ceramic substrate

(900mm²

× 0.8mm)

0.8

Junction Temperature

150

°C

Storage Temperature

Tstg

−55 to +150

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

2 : This product is designed to “ESD immunity<200V*”, so please take care when

handling.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

*Machine Model

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm²

0.8mm)

Symbol

Value

Unit

θJA

156.2

°C/W

August 2015 - Rev. 3

Publication Order Number :

SCH1436/D

12 3 4 5

中文翻译

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SCH1436-TL-W 替代型号

型号	品牌	替代类型	描述	数据表
SCH1436-TL-H	ONSEMI	类似代替	Power MOSFET, 30V, 180mΩ, 1.8A, Single N-Channel, SOT-563 / SCH6, 5000-REEL

与SCH1436-TL-W相关器件

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SCH1439	ONSEMI	获取价格	3500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, SCH6, 6 PIN
SCH1439TL	ONSEMI	获取价格	3500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, SCH6, 6 PIN
SCH1439-TL-H	ONSEMI	获取价格	Power MOSFET, 30V, 72mΩ, 3.5A, Single N-Channel, SOT-563 / SCH6, 5000-REEL
SCH1439-TL-W	ONSEMI	获取价格	Power MOSFET, 30V, 72mΩ, 3.5A, Single N-Channel, 5000-REEL
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SCH15000	SEMTECH	获取价格	STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
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SCH1UF0124	VISHAY	获取价格	Current Sensing Bondable Chip Resistors
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