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RTR020P02 PDF预览

RTR020P02

更新时间: 2024-02-26 09:56:15
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 105K
描述
Switching (-20V, -2.0A)

RTR020P02 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.15
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RTR020P02 数据手册

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RTR020P02  
Transistors  
Switching (20V, 2.0A)  
RTR020P02  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low On-resistance.  
TSMT3  
2.9 0.1  
1.0MAX.  
2) Built-in G-S Protection Diode.  
3) Small and Surface Mount Package (TSMT3).  
0.85 0.1  
0.7 0.1  
+0.1  
0.4  
0.05  
(3)  
0~0.1  
zApplication  
Power switching, DC / DC converter.  
(1)  
(2)  
0.95 0.95  
1.9 0.2  
+0.1  
0.16  
0.06  
Each lead has same dimensions  
zStructure  
Silicon P-channel  
MOS FET  
Abbreviated symbol : TX  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
TL  
(3)  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RTR020P02  
(1)  
2  
1  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
20  
12  
Unit  
(1) Gate  
(2) Source  
(3) Drain  
(2)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
V
V
Continuous  
Pulsed  
2.0  
A
Drain current  
1  
IDP  
8.0  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
0.8  
3.2  
1.0  
A
1  
2  
ISP  
A
Total power dissipation  
Channel temperature  
PD  
W
°C  
°C  
Tch  
Tstg  
150  
Range of Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
55 to +150  
zThermal resistance (Ta=25°C)  
Parameter  
Symbol  
Limits  
125  
Unit  
Channel to ambient  
Rth (ch-A)  
°C / W  
1/4  

RTR020P02 替代型号

型号 品牌 替代类型 描述 数据表
FDN340P ONSEMI

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单 P 沟道,逻辑电平,PowerTrench® MOSFET,-20V,-2A,70mΩ
FDN342P FAIRCHILD

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P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDN340P FAIRCHILD

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Single P-Channel, Logic Level, PowerTrench MOSFET

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