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RTR025N03FRATL PDF预览

RTR025N03FRATL

更新时间: 2024-01-23 22:27:42
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
3页 918K
描述
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN

RTR025N03FRATL 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.9
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):2.5 A最大漏源导通电阻:0.133 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL参考标准:AEC-Q101
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RTR025N03FRATL 数据手册

 浏览型号RTR025N03FRATL的Datasheet PDF文件第2页浏览型号RTR025N03FRATL的Datasheet PDF文件第3页 
RTR025N03FRA  
Transistors  
AEC-Q101 Qualified  
2.5V Drive Nch MOS FET  
RTR025N03FRA  
zStructure  
zExternal dimensions (Unit : mm)  
Silicon N-channel MOS FET  
TSMT3  
1.0MAX  
2.9  
0.4  
0.85  
0.7  
(
(
)
)
3
zFeatures  
1) Low On-resistance.  
( )  
2
2) Space savingsmall surface mount package (TSMT3).  
3) Low voltage drive (2.5V drive).  
1
0.95 0.95  
1.9  
0.16  
(1) Gate  
Each lead has same dimensions  
(2) Source  
(3) Drain  
Abbreviated symbol : QZ  
zApplications  
Switching  
zPackaging specifications and hFE  
zInner circuit  
(3)  
Package  
Taping  
TL  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RTR025N03FRA  
(1)  
2  
1  
(1) Gate  
(2)  
(2) Source  
(3) Drain  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
Unit  
V
30  
12  
V
Continuous  
2.5  
A
Drain current  
Pulsed  
1  
IDP  
IS  
10  
0.8  
A
Source current  
(Body diode)  
Continuous  
A
1  
2  
Pulsed  
ISP  
10  
A
Total power dissipation  
Channel temperature  
PD  
1.0  
W
°C  
°C  
Tch  
Tstg  
150  
Range of storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
55 to +150  
zThermal resistance  
Parameter  
Symbol  
Limits  
125  
Unit  
Channel to ambient  
Mounted on a ceramic board  
Rth(ch-a)  
°C/W  
1/2  

RTR025N03FRATL 替代型号

型号 品牌 替代类型 描述 数据表
RTF025N03FRATL ROHM

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Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

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