RTR030P02

更新时间： 2024-09-23 09:42:07

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	106K
描述
Switching (-20V, -3.0A)

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中文翻译

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数据手册

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RTR030P02 数据手册

RTR030P02

Transistors

Switching (−20V, −3.0A)

RTR030P02

zExternal dimensions (Unit : mm)

zFeatures

1) Low On-resistance.

TSMT3

2.9 0.1

1.0MAX.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (TSMT3).

0.85 0.1

0.7 0.1

+0.1

0.4

−0.05

(3)

0~0.1

zApplication

Power switching, DC / DC converter.

(1)

(2)

0.95 0.95

1.9 0.2

+0.1

0.16

−0.06

Each lead has same dimensions

zStructure

Silicon P-channel

MOS FET

Abbreviated symbol : TV

zPackaging specifications

zEquivalent circuit

Package

Taping

(3)

Type

Code

Basic ordering unit (pieces)

3000

RTR030P02

(1)

∗2

∗1

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

−20

Unit

(1) Gate

(2) Source

(3) Drain

(2)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Continuous

Pulsed

3.0

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.8

−3.2

1.0

∗1

∗2

I_SP

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to 150

zThermal resistance (Ta=25°C)

Parameter

Symbol

Limits

125

Unit

Channel to ambient

Rth (ch-A)

°C / W

1/4

12 3 4 5

中文翻译

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