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RTR040N03 PDF预览

RTR040N03

更新时间: 2024-09-22 22:15:07
品牌 Logo 应用领域
罗姆 - ROHM 开关
页数 文件大小 规格书
5页 88K
描述
Switching (30V, 4.0A)

RTR040N03 数据手册

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RTR040N03  
Transistors  
Switching (30V, 4.0A)  
RTR040N03  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low On-resistance.  
TSMT3  
2.9 0.1  
1.0MAX.  
2) Built-in G-S Protection Diode.  
3) Small and Surface Mount Package (TSMT3).  
0.85 0.1  
0.7 0.1  
+0.1  
0.4  
0.05  
(3)  
zApplication  
0 to 0.1  
Power switching, DC / DC converter.  
(1)  
(2)  
0.95 0.95  
1.9 0.2  
+0.1  
0.16  
0.06  
Each lead has same dimensions  
zStructure  
Silicon N-channel  
MOS FET  
Abbreviated symbol : QV  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
TL  
(3)  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RTR040N03  
(1)  
2  
1  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
Unit  
(1) Gate  
(2) Source  
(3) Drain  
(2)  
30  
V
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
12  
Continuous  
Pulsed  
4.0  
A
Drain current  
1  
IDP  
16  
0.8  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
A
1  
2  
ISP  
16  
A
Total power dissipation  
Channel temperature  
PD  
1.0  
W
°C  
°C  
Tch  
Tstg  
150  
Range of Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
55 to +150  
zThermal resistance (Ta=25°C)  
Parameter  
Symbol  
Limits  
125  
Unit  
°C / W  
Channel to ambient  
Rth (ch-a)  
1/4  

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