是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 7.86 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 45 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 0.095 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e1 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RTR030P02 | ROHM |
获取价格 |
Switching (-20V, -3.0A) | |
RTR030P02FHA | ROHM |
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Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies u | |
RTR030P02FHATL | ROHM |
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Small Signal Field-Effect Transistor, | |
RTR030P02FRATL | ROHM |
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暂无描述 | |
RTR030P02HZG | ROHM |
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RTR030P02HZG is a low on-resistance MOSFET for automotive, suitable for swithing applicati | |
RTR030P02TL | ROHM |
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SILICON P-CHANNEL MOS FET | |
RTR031000BTP | RALEC |
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厚膜高精密芯片电阻 | |
RTR031000DTP | RALEC |
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厚膜高精密芯片电阻 | |
RTR031000FTP | RALEC |
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厚膜高精密芯片电阻 | |
RTR031001BTP | RALEC |
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厚膜高精密芯片电阻 |