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RTR020P02FRATL PDF预览

RTR020P02FRATL

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
5页 960K
描述
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN

RTR020P02FRATL 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):2 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL参考标准:AEC-Q101
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RTR020P02FRATL 数据手册

 浏览型号RTR020P02FRATL的Datasheet PDF文件第2页浏览型号RTR020P02FRATL的Datasheet PDF文件第3页浏览型号RTR020P02FRATL的Datasheet PDF文件第4页浏览型号RTR020P02FRATL的Datasheet PDF文件第5页 
RTR020P02FRA  
Transistors  
AEC-Q101 Qualified  
2.5V Drive Pch MOS FET  
R
RTR020P02FRA  
zStructure  
zExternal dimensions (Unit : mm)  
Silicon P-channel MOS FET  
TSMT3  
1.0MAX  
2.9  
0.4  
0.85  
0.7  
zFeatures  
1) Low On-resistance.  
(
(
)
)
3
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TSMT3).  
( )  
2
1
0.95 0.95  
1.9  
0.16  
(1) Gate  
Each lead has same dimensions  
(2) Source  
(3) Drain  
zApplication  
Abbreviated symbol : TX  
Power switching, DC / DC converter.  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
TL  
(3)  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RTR020P02FRA  
(1)  
2  
1  
(1) Gate  
(2)  
(2) Source  
(3) Drain  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
20  
12  
Unit  
V
VDSS  
VGSS  
ID  
V
Continuous  
Pulsed  
2.0  
A
Drain current  
1  
IDP  
8.0  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
0.8  
3.2  
1.0  
A
1  
2  
ISP  
A
Total power dissipation  
Channel temperature  
PD  
W
°C  
°C  
Tch  
Tstg  
150  
Range of Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
55 to +150  
zThermal resistance  
Parameter  
Symbol  
Rth (ch-a)∗  
Limits  
125  
Unit  
Channel to ambient  
°C / W  
Mounted on a ceramic board.  
Rev.A  
1/4  

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