Datasheet > RN4991FE,LF(CT

RN4991FE,LF(CT

更新时间： 2024-09-14 21:22:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	288K
描述
Small Signal Bipolar Transistor

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RN4991FE,LF(CT 技术参数

RN4991FE

TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type

(PCT Process) (Bias Resistor Built-in Transistor)

RN4991FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

TOSHIBA

2-2N1G

R1: 10 kΩ

(Q1, Q2 common)

Weight: 0.003 g (typ.)

Marking

Equivalent Circuit (top view)

6 M

Start of commercial production

2000-05

2014-03-01

12 3 4 5 6

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