Datasheet > RN49A1FE(TPL3,F)

RN49A1FE(TPL3,F)

更新时间： 2024-09-16 08:00:35

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
7页	291K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

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技术参数
数据手册

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RN49A1FE(TPL3,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	80
元件数量：	2	极性/信道类型：	NPN/PNP
最大功率耗散 (Abs)：	0.1 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON

RN49A1FE(TPL3,F) 数据手册

RN49A1FE

TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type

(PCT Process) (Transistor with Built-in Bias Resistor)

RN49A1FE

Switching, Inverter Circuit, Interface Circuit and Driver

Circuit Applications

Unit: mm

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces the parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and saves assembly costs.

Equivalent Circuit and Bias Resistor Values

1.EMITTER1

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

2.BASE1

3.COLLECTOR2

4.EMITTER2

5.BASE2

6.COLLECTOR1

JEDEC

JEITA

―

TOSHIBA

2-2N1G

Weight: 0.006 g (typ.)

R1: 2.2 kΩ, R2: 47 kΩ

R1: 22 kΩ, R2: 47 kΩ

Q1: RN2105F equivalent

Q2: RN1108F equivalent

Marking

Equivalent Circuit (top view)

1 5

2007-11-01

12 3 4 5 6 7

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