Datasheet > RN49A4FE(TE85L,F)

RN49A4FE(TE85L,F)

更新时间： 2024-09-15 20:46:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
7页	233K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

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技术参数
数据手册

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RN49A4FE(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN49A4FE(TE85L,F) 数据手册

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RN49A4FE

TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type

(PCT Process) (Transistor with Built-in Bias Resistor)

RN49A4FE

Switching, Inverter Circuit, Interface Circuit and Driver

Circuit Applications

Unit: mm

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces the parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and saves assembly costs.

Equivalent Circuit and Bias Resistor Values

1.EMITTER1

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

2.BASE1

3.COLLECTOR2

4.EMITTER2

5.BASE2

6.COLLECTOR1

JEDEC

JEITA

―

TOSHIBA

2-2N1G

Weight: 0.003 g (typ.)

R1: 22 kΩ

R1: 4.7 kΩ

Q1: RN2112F equivalent

Q2: RN1970HFE equivalent

Marking

Equivalent Circuit (top view)

2007-11-01

12 3 4 5 6 7

中文翻译

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