Datasheet > RN49A5(TE85L,F)

RN49A5(TE85L,F)

更新时间： 2024-11-16 19:01:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	181K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,500MA I(C),SOT-363

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中文翻译

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技术参数
数据手册

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RN49A5(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83	最大集电极电流 (IC)：	0.5 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN49A5(TE85L,F) 数据手册

RN49A5

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

RN49A5

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

•

Two devices are incorporated into an Ultra-Super-Mini (6-pin) package.

Incorporating a bias resistor into a transistor reduces the parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

Diverse resistance values are available suited to a range of different

circuit designs.

Equivalent Circuit and Bias Resister Values

JEDEC

―

R1: 10 kΩ, R2 : 47 kΩ

JEITA

TOSHIBA

2-2J1A

R1: 2.2 kΩ, R2: 10 kΩ

Q1: RN1107F Equivalent

Q2: RN2327A Equivalent

Weight: 6.8 mg (typ.)

Q1 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−15

−12

−6

Collector-emitter voltage

Emitter-base voltage

Collector current

−500

2007-11-01

12 3 4 5 6

中文翻译

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