Datasheet > RN49A5(TE85L,F)

RN49A5(TE85L,F)

更新时间： 2024-09-15 19:01:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	181K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,500MA I(C),SOT-363

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN49A5(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83	最大集电极电流 (IC)：	0.5 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN49A5(TE85L,F) 数据手册

RN49A5

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

RN49A5

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

•

Two devices are incorporated into an Ultra-Super-Mini (6-pin) package.

Incorporating a bias resistor into a transistor reduces the parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

Diverse resistance values are available suited to a range of different

circuit designs.

Equivalent Circuit and Bias Resister Values

JEDEC

―

R1: 10 kΩ, R2 : 47 kΩ

JEITA

TOSHIBA

2-2J1A

R1: 2.2 kΩ, R2: 10 kΩ

Q1: RN1107F Equivalent

Q2: RN2327A Equivalent

Weight: 6.8 mg (typ.)

Q1 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−15

−12

−6

Collector-emitter voltage

Emitter-base voltage

Collector current

−500

2007-11-01

12 3 4 5 6

中文翻译

下载PDF

与RN49A5(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN49A6FS	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN49J2FS	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN49J2FS(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP
RN49J7FS	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN49P1FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN4A	SANKEN	获取价格	Silicon Diode
RN4Z	BL Galaxy Electrical	获取价格	HIGH EFFICIENCY RECTIFIER
RN4Z	LGE	获取价格	High Efficiency Rectifier
RN4Z	SANKEN	获取价格	Ultra-Fast-Recovery Rectifier Diodes
RN4ZV	SANKEN	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,