5秒后页面跳转
RN4ZZ PDF预览

RN4ZZ

更新时间: 2024-11-06 03:02:43
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 功效
页数 文件大小 规格书
2页 66K
描述
HIGH EFFICIENCY RECTIFIER

RN4ZZ 数据手册

 浏览型号RN4ZZ的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
RN4Z(Z)  
BL  
VOLTAGE RANGE: 200 V  
CURRENT: 3.5 A  
HIGH EFFICIENCY RECTIFIER  
FEATURES  
Low cost  
DO - 27  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned with alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO--27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.041 ounces,1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
RN4Z  
UNITS  
V
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
200  
140  
200  
VRRM  
VRMS  
VDC  
MaximumDC blocking voltage  
Maximumaverage forw ard rectified current  
3.5  
A
A
IF(AV)  
9.5mmlead length,  
@TA=75  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
IFSM  
120.0  
0.92  
superimposed on rated load @TJ=125  
Maximuminstantaneous forw ard voltage  
@ 3.5 A  
VF  
IR  
V
A
Maximumreverse current  
@TA=25  
50.0  
1000.0  
50  
at rated DC blocking voltage @TA=100  
Maximumreverse recovery time (Note1)  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note2)  
70  
pF  
CJ  
30  
Rθ  
/ W  
JA  
Operating junction temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance from junction to ambient.  
1.  
BLGALAXY ELECTRICAL  
Document Number 0262014  

与RN4ZZ相关器件

型号 品牌 获取价格 描述 数据表
RN50 VISHAY

获取价格

Metal Film Resistors
RN5001 TOSHIBA

获取价格

Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
RN5001(TE12R) TOSHIBA

获取价格

TRANSISTOR 2000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-5K1A, SC-62, 3 PIN, BIP General Pu
RN5002 ETC

获取价格

TRANSISTOR | 30V V(BR)CEO | 2A I(C) | SC-62
RN-500-2 RICHCO

获取价格

NARROW CARD GUIDE (RN)
RN5002(TE12L) TOSHIBA

获取价格

TRANSISTOR 2000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP G
RN5002(TE12R) TOSHIBA

获取价格

TRANSISTOR 2000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP G
RN5003 TOSHIBA

获取价格

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN5003(TE12L) TOSHIBA

获取价格

TRANSISTOR 2000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP G
RN5003(TE12R) TOSHIBA

获取价格

TRANSISTOR 2000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP G