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RN2104MFV PDF预览

RN2104MFV

更新时间： 2024-11-16 11:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
8页 206K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN2104MFV 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.47
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

RN2104MFV 数据手册

 浏览型号RN2104MFV的Datasheet PDF文件第2页浏览型号RN2104MFV的Datasheet PDF文件第3页浏览型号RN2104MFV的Datasheet PDF文件第4页浏览型号RN2104MFV的Datasheet PDF文件第5页浏览型号RN2104MFV的Datasheet PDF文件第6页浏览型号RN2104MFV的Datasheet PDF文件第7页 
RN2101MFV∼RN2106MFV  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2101MFV,RN2102MFV,RN2103MFV  
RN2104MFV,RN2105MFV,RN2106MFV  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
1.2 ± 0.05  
0.80 ± 0.05  
z Ultra-small package, suited to very high density mounting  
z Incorporating a bias resistor into the transistor reduces the number of parts,  
so enabling the manufacture of ever more compact equipment and lowering  
assembly cost.  
1
z A wide range of resistor values is available for use in various circuits.  
z Complementary to the RN1101MFV to RN1106MFV  
3
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2101MFV  
RN2102MFV  
RN2103MFV  
RN2104MFV  
RN2105MFV  
RN2106MFV  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
1. BASE  
2. EMITTER  
3. COLLECTOR  
47  
VESM  
2.2  
4.7  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-1L1A  
Absolute Maximum Ratings (Ta = 25°C)  
Weight: 1.5 mg (typ.)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2101MFV to 2106MFV  
Collector-emitter voltage  
RN2101MFV to 2104MFV  
Emitter-base voltage  
−10  
V
V
EBO  
RN2105MFV, 2106MFV  
−5  
Collector current  
I
−100  
150  
mA  
mW  
°C  
C
Collector power dissipation  
RN2101MFV to 2106MFV  
Junction temperature  
P (Note 1)  
C
T
150  
j
Storage temperature range  
T
stg  
−55 to 150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)  
Land Pattern Example  
Unit:mm  
0.5  
0.45  
1.15  
0.4  
0.45  
0.4  
0.4  
1
2010-04-06  
12345678

中文翻译

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