Datasheet > RN2106MFV(TL3PAV)

RN2106MFV(TL3PAV)

更新时间： 2024-11-15 10:10:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	201K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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RN2101MFV∼RN2106MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2101MFV, RN2102MFV, RN2103MFV

RN2104MFV, RN2105MFV, RN2106MFV

Unit: mm

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

1.2 ± 0.05

0.80 ± 0.05

z Ultra-small package, suited to very high density mounting

z Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and lowering

assembly cost.

z A wide range of resistor values is available for use in various circuits.

z Complementary to the RN1101MFV to RN1106MFV

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101MFV

RN2102MFV

RN2103MFV

RN2104MFV

RN2105MFV

RN2106MFV

4.7

1. BASE

2. EMITTER

3. COLLECTOR

VESM

2.2

4.7

JEDEC

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

CBO

CEO

RN2101MFV to 2106MFV

Collector-emitter voltage

RN2101MFV to 2104MFV

Emitter-base voltage

−10

EBO

RN2105MFV, 2106MFV

−5

Collector current

−100

150

°C

Collector power dissipation

RN2101MFV to 2106MFV

Junction temperature

P (Note 1)

150

Storage temperature range

stg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Land Pattern Example

Unit: mm

0.5

0.45

1.15

0.4

0.45

Start of commercial production

2005-02

0.4

2014-03-01

12 3 4 5 6 7 8

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与RN2106MFV(TL3PAV)相关器件

型号	品牌	获取价格	描述	数据表
RN2106MFV(TL3SEP)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2106MFV(TPL3)	TOSHIBA	获取价格	TRANSISTOR PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR, BIP General P
RN2107	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2107ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2107CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2107CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN2107F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2107F(F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2107F(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2107F(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

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