是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | 2-2HA1A, 3 PIN | Reach Compliance Code: | unknown |
风险等级: | 5.76 | Is Samacsys: | N |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-F3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN2107F(F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416 | |
RN2107F(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR | |
RN2107F(TPL3,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR | |
RN2107FS(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors -50mA -20volts 3Pin 10K x 47Kohms | |
RN2107FT | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera | |
RN2107MFV | TOSHIBA |
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Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN2107MFV(TL3MAA) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
RN2107MFV(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 100mA -50volts 3Pin 10K x 47Kohms | |
RN2108 | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) | |
RN2108(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp |