5秒后页面跳转
RN2107F PDF预览

RN2107F

更新时间: 2024-11-13 22:23:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
6页 220K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2107F 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:2-2HA1A, 3 PINReach Compliance Code:unknown
风险等级:5.76Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

RN2107F 数据手册

 浏览型号RN2107F的Datasheet PDF文件第2页浏览型号RN2107F的Datasheet PDF文件第3页浏览型号RN2107F的Datasheet PDF文件第4页浏览型号RN2107F的Datasheet PDF文件第5页浏览型号RN2107F的Datasheet PDF文件第6页 
RN2107F~RN2109F  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2107F,RN2108F,RN2109F  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit in mm  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1107F~RN1109F  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN2107F  
RN2108F  
RN2109F  
10  
22  
47  
47  
47  
22  
JEDEC  
EIAJ  
2-2HA1A  
TOSHIBA  
Weight: 2.3 mg  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2107F  
~RN2109F  
Collector-emitter voltage  
RN2107F  
RN2108F  
RN2109F  
6  
Emitter-base voltage  
V
V
7  
EBO  
15  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2107F  
~RN2109F  
T
150  
j
T
55~150  
°C  
stg  
000707EAA1  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy  
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by  
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its  
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or  
others.  
· The information contained herein is subject to change without notice.  
2001-02-08 1/5  

与RN2107F相关器件

型号 品牌 获取价格 描述 数据表
RN2107F(F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2107F(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2107F(TPL3,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2107FS(TPL3) TOSHIBA

获取价格

Digital Transistors -50mA -20volts 3Pin 10K x 47Kohms
RN2107FT TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN2107MFV TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2107MFV(TL3MAA) TOSHIBA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2107MFV(TPL3) TOSHIBA

获取价格

Digital Transistors 100mA -50volts 3Pin 10K x 47Kohms
RN2108 TOSHIBA

获取价格

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2108(TE85L) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp