RN2107F~RN2109F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107F,RN2108F,RN2109F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit in mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1107F~RN1109F
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2107F
RN2108F
RN2109F
10
22
47
47
47
22
JEDEC
―
EIAJ
―
2-2HA1A
TOSHIBA
Weight: 2.3 mg
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
V
V
−50
−50
V
V
CBO
CEO
RN2107F
~RN2109F
Collector-emitter voltage
RN2107F
RN2108F
RN2109F
−6
Emitter-base voltage
V
V
−7
EBO
−15
Collector current
I
−100
100
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
C
RN2107F
~RN2109F
T
150
j
T
−55~150
°C
stg
000707EAA1
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2001-02-08 1/5