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RN2106MFV(TL3SEP) PDF预览

RN2106MFV(TL3SEP)

更新时间： 2024-11-15 07:02:31
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 201K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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RN2106MFV(TL3SEP) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknown风险等级：5.73
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 10最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

RN2106MFV(TL3SEP) 数据手册

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RN2101MFV∼RN2106MFV  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN2101MFV, RN2102MFV, RN2103MFV  
RN2104MFV, RN2105MFV, RN2106MFV  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
1.2 ± 0.05  
0.80 ± 0.05  
z Ultra-small package, suited to very high density mounting  
z Incorporating a bias resistor into the transistor reduces the number of parts,  
1
so enabling the manufacture of ever more compact equipment and lowering  
assembly cost.  
3
z A wide range of resistor values is available for use in various circuits.  
z Complementary to the RN1101MFV to RN1106MFV  
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2101MFV  
RN2102MFV  
RN2103MFV  
RN2104MFV  
RN2105MFV  
RN2106MFV  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
1. BASE  
22  
2. EMITTER  
3. COLLECTOR  
VESM  
47  
2.2  
4.7  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-1L1A  
Weight: 1.5 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2101MFV to 2106MFV  
Collector-emitter voltage  
RN2101MFV to 2104MFV  
Emitter-base voltage  
−10  
V
V
EBO  
RN2105MFV, 2106MFV  
−5  
Collector current  
I
−100  
150  
mA  
mW  
°C  
C
Collector power dissipation  
RN2101MFV to 2106MFV  
Junction temperature  
P (Note 1)  
C
T
150  
j
Storage temperature range  
T
stg  
−55 to 150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)  
Land Pattern Example  
Unit: mm  
0.5  
0.45  
1.15  
0.4  
0.45  
Start of commercial production  
2005-02  
0.4  
0.4  
1
2014-03-01  
12345678

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