Datasheet > RN2106MFV(TPL3)

RN2106MFV(TPL3)

更新时间： 2024-11-14 19:31:39

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
8页	200K
描述
TRANSISTOR PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR, BIP General Purpose Small Signal

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RN2106MFV(TPL3) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.39
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	80
元件数量：	1	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.15 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN2106MFV(TPL3) 数据手册

RN2101MFV∼RN2106MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101MFV,RN2102MFV,RN2103MFV

RN2104MFV,RN2105MFV,RN2106MFV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

1.2 ± 0.05

0.80 ± 0.05

z Ultra-small package, suited to very high density mounting

z Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and lowering

assembly cost.

z A wide range of resistor values is available for use in various circuits.

z Complementary to the RN1101MFV to RN1106MFV

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101MFV

RN2102MFV

RN2103MFV

RN2104MFV

RN2105MFV

RN2106MFV

4.7

1. BASE

2. EMITTER

3. COLLECTOR

VESM

2.2

4.7

JEDEC

JEITA

―

TOSHIBA

2-1L1A

Absolute Maximum Ratings (Ta = 25°C)

Weight: 1.5 mg (typ.)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

CBO

CEO

RN2101MFV to 2106MFV

Collector-emitter voltage

RN2101MFV to 2104MFV

Emitter-base voltage

−10

EBO

RN2105MFV, 2106MFV

−5

Collector current

−100

150

°C

Collector power dissipation

RN2101MFV to 2106MFV

Junction temperature

P (Note 1)

150

Storage temperature range

stg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Land Pattern Example

Unit:mm

0.5

0.45

1.15

0.4

0.45

0.4

2010-04-06

12 3 4 5 6 7 8

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与RN2106MFV(TPL3)相关器件

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