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RN2105 PDF预览

RN2105

更新时间: 2024-01-10 06:29:36
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
7页 258K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2105 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.46
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 21.36最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN2105 数据手册

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RN2101~RN2106  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2101,RN2102,RN2103  
RN2104,RN2105,RN2106  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1101~RN1106  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN2101  
RN2102  
RN2103  
RN2104  
RN2105  
RN2106  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 2.4mg  
2-2H1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2101~2106  
Collector-emitter voltage  
RN2101~2104  
RN2105, 2106  
10  
Emitter-base voltage  
V
V
EBO  
5  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2101~2106  
T
150  
j
T
55~150  
°C  
stg  
1
2001-06-07  

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