是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.47 | Is Samacsys: | N |
其他特性: | BUILT-IN RESISTOR RATIO IS 10 | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 6 pF | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN2106(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp | |
RN2106(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416 | |
RN2106,LF(CT | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
RN2106ACT | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN2106CT | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver | |
RN2106CT(TPL3) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883 | |
RN2106F | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Pur | |
RN2106FT | TOSHIBA |
获取价格 |
暂无描述 | |
RN2106FV | TOSHIBA |
获取价格 |
暂无描述 | |
RN2106MFV | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |