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RN2106 PDF预览

RN2106

更新时间: 2024-09-25 22:23:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
7页 258K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2106 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.47Is Samacsys:N
其他特性:BUILT-IN RESISTOR RATIO IS 10最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN2106 数据手册

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RN2101~RN2106  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2101,RN2102,RN2103  
RN2104,RN2105,RN2106  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1101~RN1106  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN2101  
RN2102  
RN2103  
RN2104  
RN2105  
RN2106  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 2.4mg  
2-2H1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2101~2106  
Collector-emitter voltage  
RN2101~2104  
RN2105, 2106  
10  
Emitter-base voltage  
V
V
EBO  
5  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2101~2106  
T
150  
j
T
55~150  
°C  
stg  
1
2001-06-07  

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