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RN2106ACT PDF预览

RN2106ACT

更新时间： 2024-09-26 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
8页 196K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN2106ACT 技术参数

生命周期：Obsolete包装说明：CHIP CARRIER, R-XBCC-N3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.73
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 10外壳连接：COLLECTOR
最大集电极电流 (IC)：0.08 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-XBCC-N3元件数量：1
端子数量：3封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

RN2106ACT 数据手册

 浏览型号RN2106ACT的Datasheet PDF文件第2页浏览型号RN2106ACT的Datasheet PDF文件第3页浏览型号RN2106ACT的Datasheet PDF文件第4页浏览型号RN2106ACT的Datasheet PDF文件第5页浏览型号RN2106ACT的Datasheet PDF文件第6页浏览型号RN2106ACT的Datasheet PDF文件第7页 
RN2101ACT ~ RN2106ACT  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN2101ACT,RN2102ACT,RN2103ACT  
RN2104ACT,RN2105ACT,RN2106ACT  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
0.6±0.05  
Driver Circuit Applications  
0.5±0.03  
•
•
Extra small package (CST3) is applicable for extra high density  
fabrication.  
３
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
１
２
•
Complementary to RN1101ACT to RN1106ACT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2101ACT  
RN2102ACT  
RN2103ACT  
RN2104ACT  
RN2105ACT  
RN2106ACT  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
1.BASE  
B
CST3  
2.EMITTER  
3.COLLECOTR  
22  
47  
JEDEC  
JEITA  
―
―
E
2.2  
4.7  
TOSHIBA  
2-1J1A  
Weight: 0.75 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2101ACT to 2106ACT  
Collector-emitter voltage  
RN2101ACT to 2104ACT  
Emitter-base voltage  
−10  
V
V
EBO  
RN2105ACT, 2106ACT  
−5  
Collector current  
I
−80  
mA  
mW  
°C  
C
Collector power dissipation  
RN2101ACT to 2106ACT  
Junction temperature  
P
100*  
150  
C
T
j
Storage temperature range  
T
stg  
−55 to 150  
°C  
* : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-04-17  
12345678

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 		TRANSISTOR PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR, BIP General P

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