生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
Reach Compliance Code: | unknown | 风险等级: | 5.72 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 21.36 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN2105MFV(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 100mA -50volts 3Pin 2.2K x 47Kohms |
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RN2106 | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
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RN2106(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp |
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RN2106(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416 |
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RN2106,LF(CT | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor |
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RN2106ACT | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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RN2106CT | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver |
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RN2106CT(TPL3) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883 |
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RN2106F | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Pur |
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RN2106FT | TOSHIBA |
获取价格 |
暂无描述 |
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