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RN1111(TE85L,F) PDF预览

RN1111(TE85L,F)

更新时间: 2024-11-25 19:09:27
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 306K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

RN1111(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:4.94最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):120元件数量:1
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

RN1111(TE85L,F) 数据手册

 浏览型号RN1111(TE85L,F)的Datasheet PDF文件第2页浏览型号RN1111(TE85L,F)的Datasheet PDF文件第3页浏览型号RN1111(TE85L,F)的Datasheet PDF文件第4页浏览型号RN1111(TE85L,F)的Datasheet PDF文件第5页浏览型号RN1111(TE85L,F)的Datasheet PDF文件第6页 
RN1110,RN1111  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN1110, RN1111  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
With built-in bias resistors  
Simplified circuit design  
Reduced number of parts and simplified manufacturing process  
Complementary to RN2110 and RN2111  
Equivalent Circuit  
SSM  
Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
JEITA  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
2-2H1A  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Weight: 2.4mg (typ.)  
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
T
150  
j
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1990-12  
1
2014-03-01  

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