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RN1107MFV(TL3MAA) PDF预览

RN1107MFV(TL3MAA)

更新时间: 2024-01-02 13:22:27
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
6页 376K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

RN1107MFV(TL3MAA) 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code:unknown风险等级:5.7
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RN1107MFV(TL3MAA) 数据手册

 浏览型号RN1107MFV(TL3MAA)的Datasheet PDF文件第1页浏览型号RN1107MFV(TL3MAA)的Datasheet PDF文件第2页浏览型号RN1107MFV(TL3MAA)的Datasheet PDF文件第3页浏览型号RN1107MFV(TL3MAA)的Datasheet PDF文件第4页浏览型号RN1107MFV(TL3MAA)的Datasheet PDF文件第6页 
RN1107MFV~RN1109MFV  
Marking  
Type Name  
Marking  
RN1107MFV  
RN1108MFV  
RN1109MFV  
5
2014-03-01  

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