Datasheet > RM3407

RM3407

更新时间： 2024-10-31 18:06:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	378K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 4.3 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ) typ :

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中文翻译

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RM3407 数据手册

RM3407

P-Channel Enhancement Mode Power MOSFET

Description

The RM3407uses advanced trench technology to provide

excellent R_DS(ON), This device is suitable for use as a load

switch or in PWM applications.

Schematic diagram

General Features

ƽ V_DS= -30V,I_D= -4.3A

R_DS(ON)< 90mΩ @ V_GS=-4.5V

R_DS(ON)<52mΩ @ V_GS=-10V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin Assignment

Application

ƽ PWM applications

ƽ Load switch

ƽ Power management

Halogen-free

SOT-23 top view

Tape width

P/N suffix V means AEC-Q101 qualified, e.g:RM3407V

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

3407

RM3407

SOT23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

-4.3

I_D

I_DM

-20

Maximum Power Dissipation

1.5

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

_GS=0V I_D=-250μA

-30

-33

_DS=-24V,V_GS=0V

-1

μA

2018-11/15

REV:A

12 3 4 5 6 7...9

中文翻译

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与RM3407相关器件

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