Datasheet > RM35N650T7

RM35N650T7

更新时间： 2024-12-01 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	730K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 35 A;Rds-on (typ) (mOhms) : 84 mOhms;Total Gate Charge (nQ) typ : 90 nQ;Maximum Power Dissipation (W) : 312 W;Vgs(th) (typ) : 4 V;Input Capacitance (Ciss) : 3375 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

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中文翻译

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数据手册

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RM35N650T7 数据手册

ꢀ ꢀ

RM35N650T7

Super-junction Power Mosfet

Feature

ꢀ 650V,35A

R_DS

_˅ꢀ95m¡˜V_GS=10V

ꢀ Ultra-fast body didode

ꢀ Good Reliability

ꢀ Fast switching speed

ꢀ Extremely low losses due to very Eon and Eoff

ꢀ Qualified for industrial grade applications according to JEDEC

ꢀ RoHs compliant

TO-247-3L

Application

ꢀ Swith Mode Power Supply (SMPS )

ꢀ Uninterruptible Power Supply (UPS )

ꢀ Power Factor Correction (PFC)

ꢀ LED Light

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

35N650

TO-247-3L

RM35N650T7

Maximum Ratings (T_A= 25°C unless otherwise noted)

Parameter

Value

Symbol

Units

V_DS

Drain-Source Voltage

650

Drain Current - Continuous (T_C= 25°C) ^{(Note 1)}

Drain Current - Continuous (T_C= 100°C)

I_D

Drain Current - Pulsed ^{(Note 2)}

Gate-Source Voltage

I_DM

V_GS

105

± 30

778

312

Single Pulsed Avalanche Energy ^{(Note 3)}

Power Dissipation (T_C= 25°C)

E_AS

°C

P_D

T_J,T_STG

Operating and Storage Temperature Range

-55 to +150

2023-07/x

REV:O

ꢀ

12 3 4 5 6

中文翻译

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