Datasheet > RM35N650AT7

RM35N650AT7

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	6570K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 35 A;Rds-on (typ) (mOhms) : 93 mOhms;Total Gate Charge (nQ) typ : 80.2 nQ;Maximum Power Dissipation (W) : 357 W;Vgs(th) (typ) : 4.0 V;Input Capacitance (Ciss) : 3009 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

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RM35N650AT7 数据手册

RM35N650AT7

Super-junction Power Mosfet

GENERAL DESCRIPTION

SJ-FET is new generation of high voltage MOS FET family

thatis utilizing an advanced charge balance mechanism for

Outstanding low on-resistance and lower gate charge

performance.This advanced technology has been tailored to

Minimize conduction loss,provide superior switching

performance,and withstand extreme dv/dt rate and higher

Avalanche energy.SJ-FET is suitable for various AC/DC

power conversion in switching mode operation for higher

efficiency.

Features

I_D=35A

VDS,min@Tj(max)=700V

TYP:93mΩ@V_GS=10V

MAX:110mΩ

R_DS(ON)

Applications

Powerfactioncorrection(PFC)

Switchedmodepowersupplies(SMPS)

Uninterruptiblepowersupply(UPS)

LEDlightingpower

Halogen-free

ORDERING INFORMATION

Part No.

Package

Marking

Material

Packing

RM35N650AT7

TO-247

35N650

Pb free

Tube

ABSOLUTE MAXIMUM RATINGS (T 25C unless otherwise noted)

Characteristics

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

650

±30

Gate-Source Voltage

V_GS

T_C25C

Drain Current

I_D

T_C100C

Drain Current Pulsed

(Note 1)

I_DM

P_D

140

357

Power Dissipation(T_C25C)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

T_J

1136

C

-55～+150

Operation Junction Temperature Range

Storage Temperature Range

T_stg

Maximum lead temperature for soldering

purposes,1/8" from case for 5 seconds

300

C

2023-12/59

REV:O

12 3 4 5 6 7

中文翻译

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