Datasheet > RM35P30LD

RM35P30LD

更新时间： 2024-06-27 12:12:34

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	262K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 35 A;Total Gate Charge (nQ) typ : 12.5 nQ;Maximum Power Dissipation (W) : 34.7 W;Input Capacitance (Ciss) : 1345 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM35P30LD 数据手册

RM35P30LD

P-Channel Enhancement Mode Power MOSFET

Description

The RM35P30LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

Schematic diagram

V_DS=-30V,I_D=-35A

R_DS(ON)<20mΩ @ V_GS=-10V

R_DS(ON)<32mΩ @ V_GS=-4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Marking and pin assignment

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

100% UIS TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM35P30LD

TO-252-2L

35P30

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

-35

-22

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

-70

I_DM

Maximum Power Dissipation

Single pulse avalanche energy^{(Note 5)}

34.7

P_D

E_AS

72.2

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

3.6

2019-02/83

REV:O

12 3 4 5 6 7

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