Datasheet > RM3710

RM3710

更新时间： 2024-11-19 18:09:35

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	303K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 59 A;Rds-on (typ) (mOhms) : 14 mOhms;Maximum Power Dissipation (W) : 160 W;Input Capacitance (Ciss) : 2900 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM3710 数据手册

RM3710

N-Channel Enhancement Mode Power MOSFET

Description

uses advanced trench technology and

The RM3710

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V,I

ƽ V_DS= 100

_D=59A

R_DS(ON)<18mΩ @ V _GS=10V

Schematic diagram

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

TO-220-3L top view

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Quantity

Device

Device Package

Reel Size

Tape width

3710

RM3710

TO-220-3L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

V_DSS

I_D(Tc=25ć)

I_D(Tc=100ć)

I_DM

100

Drain Current

Pulsed Drain Current

240

Gate-Source Voltage

V_GSS

Avalanche Current

I_AR

Single Pulsed Avalanche Energy

Total Power Dissipation

Junction and Storage Temperature Range

Junction-to-Ambient

E_AS

170

160

-55 to 150

ć/W

P_D(Tc=25ć)

T_J,T_STG

R_%JA

2021-07/33

REV:O

12 3 4 5

中文翻译

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