Datasheet > RM35N30DN

RM35N30DN

更新时间： 2024-06-27 12:12:55

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	521K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 35.0 A;Rds-on (typ) (mOhms) : 4.8 mOhms;Total Gate Charge (nQ) typ : 19 nQ;Maximum Power Dissipation (W) : 35 W;Vgs(th) (typ) : 0.85 V;Input Capacitance (Ciss) : 1265 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN

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RM35N30DN 数据手册

RM35N30DN

N-Channel Enhancement Mode Power MOSFET

Description

The RM35N30DN uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=30V,I_D=35A

Schematic diagram

R_DS(ON)< 5.5mΩ @ V_GS=10V

R_DS(ON)< 9.5mΩ @ V_GS=4.5V

35N30

XXXX

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Marking and pin assignment

Application

ƽ Secondary side synchronous rectifier

ƽ High side switch in POL DC/DC converter

Halogen-free

DFN 3x3 EP top view

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

35N30

RM35N30DN

DFN 3x3 EP

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V^DS

V^GS

I_D

Gate-Source Voltage

±20

Drain Current-Continuous

Pulsed Drain Current

120

I_DM

P_D

Maximum Power Dissipation

Derating factor

0.28

W/ć

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

150

-55 To 150

T_J,T_STG

2018-08/17

REV:A

12 3 4 5 6 7

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