Datasheet > RM35N80D3

RM35N80D3

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
RECTRON		栅光电二极管
页数	文件大小	规格书
7页	402K
描述
Vdss (V) : 80 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 14.5 mOhms;Total Gate Charge (nQ) typ : 7.9 nQ;Maximum Power Dissipation (W) : 35 W;Input Capacitance (Ciss) : 1080 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : PDFN3.3x3.3-8L

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中文翻译

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数据手册

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RM35N80D3 数据手册

RM35N80D3

N-Channel Enhancement Mode MOSFET

Features

Advanced trench cell design

Low Thermal Resistance

P^tot35 W

ู

I^D15 A

ู

BV 80 V

ฺ

R^DS(ON)ู 15.5 mΩ @ V^GS= 10 V

RDS(ON) ู 18.5 mΩ @ V^GS= 6 V

R^DS(ON)ู 22.5 mΩ @ V^GS= 4.5 V

Schematic diagram

Applications

Motor drivers

DC/DC Converter

alogen-free

top view

PDFN3.3x3.3-8L

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

5000

RM35N80D3

PDFN3.3X3.3-8L

15N08

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Symbol

V_DS

V_GS

I_D*

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Conditions

Min Max Unit

T_A=25ȭ

T_A=25ȭ, V_GS=10 V

T_A=100ȭ, V_GS=10 V

T_A=25ȭ, V_GS=10 V

T_A=25ȭ

I_D*

Drain Current

8.4

34.4

I_DM*^,**

P_tot*

T_stg

Pulsed Source Current

Total Power Dissipation

Storage Temperature

Junction Temperature

Diode Forward Current

-55

150

T_J

I_S

T_A=25ȭ

R_θJA

Thermal Resistance-Junction to Ambient

62.5

ȭ/W

Surface Mounted on 1 in²pad area, t ꢀ 10 sec

Pulse width ꢀ 300 ꢁs, duty cycle ꢀ 2%

Notes:

2022-11/113

REV:O

12 3 4 5 6 7

中文翻译

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