Datasheet > RM35P30DN

RM35P30DN

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	510K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 32 A;Rds-on (typ) (mOhms) : 20 mOhms;Total Gate Charge (nQ) typ : 12.5 nQ;Maximum Power Dissipation (W) : 29 W;Input Capacitance (Ciss) : 1345 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : DFN3x3

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RM35P30DN 数据手册

RM35P30DN

P-Channel Enhancement Mode Power MOSFET

Description

The RM35P30DN uses advanced trench technology to provide

excellent R_DS(ON), low gate charge . This device is suitable for

use as a load switch or in PWM applications.

General Features

V_DS= -30V,I_D= -32A

Schematic diagram

R_DS(ON)< 32mΩ @ V_GS=-4.5V

R_DS(ON)< 20mΩ @ V_GS=-10V

High Power and current handing capability

Lead free product is acquired

Surface mount package

Marking and pin assignment

Application

PWM applications

Load switch

Power management

Halogen-free

DFN 3x3 EP top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

B3103

RM35P30DN

DFN3X3

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

-32

-20

-65

I_D

I_D(100

Drain Current-Continuous(T_C=100

Drain Current-Pulsed ^{(Note 1)}

Maximum Power Dissipation

)

I_DM

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case ^{(Note 2)}

R_θJC

4.32

2021-11/83

REV:A

12 3 4 5 6 7...9

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