Datasheet > RM370N150T7

RM370N150T7

更新时间： 2024-06-27 12:12:11

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	1204K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 366 A;Rds-on (typ) (mOhms) : 2.8 mOhms;Total Gate Charge (nQ) typ : 138 nQ;Maximum Power Dissipation (W) : 833 W;Vgs(th) (typ) : 2.9 V;Input Capacitance (Ciss) : 11436 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

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RM370N150T7 数据手册

RM370N150T7

Power MOSFET

N-Channel

Feature

I_D

V_DS

= 366

ꢀ

150 V,

R_DS(on)

10 V

＜2.8

V_GS

ꢀ High Speed Power Switching

ꢀ

Enhanced Body diode dv/dt capability

ꢀ Enhanced Avalanche Ruggedness

100% UIS Tested, 100% Rg Tested

ꢀ

ꢀLead Free, Halogen Free

TO-247

Application

ꢀ

Synchronous Rectification in SMPS

Hard Switching and High Speed Circuit

DC/DC in Telecoms and Inductrial

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ

Part Number

RM370N150T7

Package

TO-247

Marking

370N150

Absolute Maximum Ratings at T_j=25℃ (unless otherwise specified)

Parameter

Symbol

Conditions

Value

Unit

366

258

180

150

±20

1200

720

833

T_C=25℃

T_C=100℃

Continuous Drain Current (Silicon Limited)

I_D

Continuous Drain Current (Package Limited)

Drain to Source Voltage

Gate to Source Voltage

T_C=25℃

℃

V_DS

V_GS

Pulsed Drain Current

I_DM

Avalanche Energy, Single Pulse

Power Dissipation

E_AS

P_D

L=0.4mH, T_C=25℃

T_C=25℃

Operating and Storage Temperature

-55 to 175

T_J, T_stg

Absolute Maximum Ratings

Parameter

Thermal Resistance Junction-Ambient

Thermal Resistance Junction-Case

Symbol

R_qJA

R_qJC

Max

0.18

Unit

℃/W

ꢀ

2023-04/69

REV:O

ꢀ

12 3 4 5 6

中文翻译

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